类型 | 描述 |
---|---|
系列: | SuperMESH5™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 950 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.25Ohm @ 3A, 10V |
vgs(th) (最大值) @ id: | 5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 450 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 90W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A DPAK |
|
IRF634STRRPBFVishay / Siliconix |
MOSFET N-CH 250V 8.1A D2PAK |
|
STW11NK90ZSTMicroelectronics |
MOSFET N-CH 900V 9.2A TO247-3 |
|
NTE2376NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 30A TO247 |
|
IXFK80N50Q3Wickmann / Littelfuse |
MOSFET N-CH 500V 80A TO264AA |
|
STB43N65M5STMicroelectronics |
MOSFET N-CH 650V 42A D2PAK |
|
CMLDM8120G TR PBFREECentral Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
TP65H070LSGTransphorm |
GANFET N-CH 650V 25A 3PQFN |
|
IXTP12N50PWickmann / Littelfuse |
MOSFET N-CH 500V 12A TO220AB |
|
SQA470EEJ-T1_GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.25A PPAK SC70 |
|
TK6R7P06PL,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 60V 46A DPAK |
|
IXFK32N80Q3Wickmann / Littelfuse |
MOSFET N-CH 800V 32A TO264AA |
|
SIR826ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |