English
简体中文
MOSFET N-CH 1000V 38A PLUS264
IC SRAM 32KBIT PARALLEL 100TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 38A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 19A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 250 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 13500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 890W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS264™ |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM3J355R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |
|
IXFT60N65X2HVWickmann / Littelfuse |
MOSFET N-CH 650V 60A TO268HV |
|
APT20M38SVRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 67A D3PAK |
|
BUK9M35-80EXNexperia |
MOSFET N-CH 80V 26A LFPAK33 |
|
BSZ035N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/40A 8TSDSON |
|
SIHP28N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 28A TO220AB |
|
IPA90R1K0C3XKSA1Rochester Electronics |
MOSFET N-CH 900V 5.7A TO220-FP |
|
SUD35N10-26P-GE3Vishay / Siliconix |
MOSFET N-CH 100V 35A TO252 |
|
IPP90R1K2C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO220-3 |
|
AUIRFR2905ZTRRochester Electronics |
MOSFET N-CH 55V 42A DPAK |
|
FDS6680ARochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IRF9530SPBFVishay / Siliconix |
MOSFET P-CH 100V 12A D2PAK |
|
PSMN7R0-60YS,115Nexperia |
MOSFET N-CH 60V 89A LFPAK56 |