MOSFET N-CH 650V 11A TO263-3
SMA-RP/TNC-SJB G142 72I
类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 380mOhm @ 7A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 125W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO263-3-2 |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQP7N20Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO220-3 |
|
BSC886N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFI3205PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 64A TO220AB FP |
|
IXTP130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO220 |
|
SQM40041EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 120A TO263 |
|
FQD17P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
RS1G300GNTBROHM Semiconductor |
MOSFET N-CH 40V 30A 8HSOP |
|
SIHA24N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 9A TO220 |
|
IRFR9N20DPBFRochester Electronics |
MOSFET N-CH 200V 9.4A DPAK |
|
BSZ018NE2LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 22A/40A TSDSON |
|
FDMA86551LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 7.5A 6MICROFET |
|
FQU10N20TURochester Electronics |
MOSFET N-CH 200V 7.6A IPAK |
|
BSN20BK215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |