English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.05Ohm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD18N06L-1GRochester Electronics |
MOSFET N-CH 60V 18A IPAK |
|
NVMFS5C410NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
IPP180N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO220-3 |
|
IPN95R2K0P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A SOT223 |
|
DMT3003LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 22A PWRDI3333 |
|
IPP048N04NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A TO220-3 |
|
SPD08P06PGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 8.83A TO252-3 |
|
PMG85XPHNexperia |
MOSFET P-CH 20V 2A 6TSSOP |
|
CSD18532NQ5BTexas Instruments |
MOSFET N-CH 60V 22A/100A 8VSON |
|
FK3506010LPanasonic |
MOSFET N-CH 60V 100MA SMINI3 |
|
IPD127N06LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-3 |
|
IXTA3N100D2-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO263 |
|
BUK963R3-60E,118Nexperia |
MOSFET N-CH 60V 120A D2PAK |
