类型 | 描述 |
---|---|
系列: | * |
包裹: | BulkBulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 250 V |
电流 - 连续漏极 (id) @ 25°c: | 51A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 40W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220FM |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPA057N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 60A TO220-3-31 |
|
SSP1N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDH047AN08A0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 8 |
|
IPA60R060P7XKSA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 600V 48A TO220 |
|
NTDV20P06LT4GRochester Electronics |
MOSFET P-CH 60V 15.5A DPAK |
|
C3M0060065JWolfspeed - a Cree company |
SICFET N-CH 650V 36A TO263-7 |
|
2SK303000LPanasonic |
MOSFET N-CH 100V 8A U-G1 |
|
IPB50R199CPATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
NVMFS6H864NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.7A/21A 5DFN |
|
NVMFS5830NLWFT1GRochester Electronics |
MOSFET N-CH 40V 29A 5DFN |
|
DMP2160UW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 1.5A SOT-323 |
|
SIHA12N50E-E3Vishay / Siliconix |
MOSFET N-CH 500V 10.5A TO220 |
|
SPP16N50C3HKSA1Rochester Electronics |
MOSFET N-CH 560V 16A TO220-3-1 |