English
简体中文
MOSFET N-CH 30V 160A D2PAK
CABLE CAT5 8COND 22AWG 1640.42'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6.32 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 231W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD4815N-35GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 6 |
|
NTMS4920NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.6A 8SOIC |
|
IPB160N04S4LH1ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
IRFZ44RPBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
ZXMP10A18KTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 3.8A TO252-3 |
|
IRLU3103PBFRochester Electronics |
MOSFET N-CH 30V 55A IPAK |
|
AUIRF3805S-7PRochester Electronics |
AUTOMOTIVE N CHANNEL |
|
R6015ANXROHM Semiconductor |
MOSFET N-CH 600V 15A TO220FM |
|
STS10P4LLF6STMicroelectronics |
MOSFET P-CH 40V 10A 8SO |
|
NTD25P03LT4Rochester Electronics |
MOSFET P-CH 30V 25A DPAK |
|
FDP80N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 80A TO220-3 |
|
HUFA75842P3Rochester Electronics |
MOSFET N-CH 150V 43A TO220-3 |
|
IPAW60R380CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 15A TO220 |