English
简体中文
TRANS SJT N-CH 1.2KV 89A SOT227
TXRX 1550NM EML, APD, 10GE-ZR, ,
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 1.2 kV |
| 电流 - 连续漏极 (id) @ 25°c: | 89A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 20V |
| rds on (max) @ id, vgs: | 31mOhm @ 40A, 20V |
| vgs(th) (最大值) @ id: | 2.8V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 232 nC @ 20 V |
| vgs (最大值): | +25V, -10V |
| 输入电容 (ciss) (max) @ vds: | 3020 pF/m @ 1000 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 395W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227 (ISOTOP®) |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB6670ASRochester Electronics |
MOSFET N-CH 30V 62A TO263AB |
|
IMZA65R048M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
RJK03C0DPA-00#J53Rochester Electronics |
MOSFET N-CH 30V 70A 8WPAK |
|
IRF60R217IR (Infineon Technologies) |
MOSFET N-CH 60V 58A DPAK |
|
TP65H070LDGTransphorm |
GANFET N-CH 650V 25A 3PQFN |
|
SI4190ADY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 18.4A 8SO |
|
FCD620N60ZFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.3A DPAK |
|
NVMFS5C430NWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 35A/185A 5DFN |
|
NTD4979NT4GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A DPAK |
|
ZXM61P02FTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 900MA SOT23-3 |
|
IRLR2908TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 30A DPAK |
|
IPD06N03LAGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STWA40N95DK5STMicroelectronics |
MOSFET N-CHANNEL 950V 38A TO247 |