类型 | 描述 |
---|---|
系列: | PolarP™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 110mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PHK12NQ03LT,518-NEXRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
IRFR4104PBFRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
IRLB3813PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 260A TO220AB |
|
NTD3055-150-1Rochester Electronics |
MOSFET N-CH 60V 9A DPAK |
|
TSM3457CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 5A SOT26 |
|
SI7726DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35A PPAK1212-8 |
|
IRFS630ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW20N95K5STMicroelectronics |
MOSFET N-CH 950V 17.5A TO247-3 |
|
AON7406Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 9A/25A 8DFN |
|
MMBT7002KDiotec Semiconductor |
MOSFET N-CH 60V 300MA SOT23-3 |
|
FCH060N80-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 56A TO247 |
|
FDB7030BLSRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CEDM7001 TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT883 |