MOSFET N-CH 200V 18A D2PAK
VARIABLE TRANSFORMER 140V 50A
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 150mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 67 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.16 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 150W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MIC94030YM4TRRochester Electronics |
MOSFET P-CH 16V 1A SOT143 |
|
STU9HN65M2STMicroelectronics |
MOSFET N-CH 650V 5.5A IPAK |
|
HUFA76419S3STRochester Electronics |
MOSFET N-CH 60V 29A D2PAK |
|
IPD65R650CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7A TO252-3 |
|
DMTH6004SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 25A PWRDI5060 |
|
IPD60R210CFD7ATMA1IR (Infineon Technologies) |
MOSFET N CH |
|
STF33N60DM6STMicroelectronics |
MOSFET N-CH 600V 25A TO220FP |
|
BFL4004-1ERochester Electronics |
MOSFET N-CH 800V 4.3A TO220F-3FS |
|
MCU12P10A-TPMicro Commercial Components (MCC) |
P-CHANNEL MOSFET, DPAK |
|
IXTT20N50DWickmann / Littelfuse |
MOSFET N-CH 500V 20A TO268 |
|
PSMN9R5-100PS,127Nexperia |
MOSFET N-CH 100V 89A TO220AB |
|
TK50P03M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 50A DP |
|
NVMFS5C682NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.8A/25A 5DFN |