类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4V, 5V |
rds on (max) @ id, vgs: | 200mOhm @ 4.8A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.4 nC @ 5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 27W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDP7N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.5A TO220-3 |
|
AOD442GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 13A/40A TO252 |
|
IXKR47N60C5Wickmann / Littelfuse |
MOSFET N-CH 600V 47A ISOPLUS247 |
|
NVMFS5C442NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/130A 5DFN |
|
NVBLS0D5N04M8TXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 300A 8HPSOF |
|
NTGS3443T2GRochester Electronics |
MOSFET P-CH 20V 2.2A 6TSOP |
|
FDB031N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 120A D2PAK |
|
IRFR310BTFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
XP161A11A1PR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 4A SOT89 |
|
IPD50N03S4L06ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-31 |
|
FDS7088N3Rochester Electronics |
MOSFET N-CH 30V 21A 8SO |
|
IRF9520STRRPBFVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
PSMN2R8-40BS,118Rochester Electronics |
MOSFET N-CH 40V 100A D2PAK |