English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 360mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 790 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTQ480P2Wickmann / Littelfuse |
MOSFET N-CH 500V 52A TO3P |
|
STP31N65M5STMicroelectronics |
MOSFET N-CH 650V 22A TO220 |
|
PMZB150UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SISS66DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 49.1/178.3A PPAK |
|
IXTH2N170D2Wickmann / Littelfuse |
MOSFET N-CH 1700V 2A TO247 |
|
FDU8880Rochester Electronics |
MOSFET N-CH 30V 13A/58A IPAK |
|
DMN3023L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.2A SOT23 |
|
NVTFS5124PLWFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
STP18N60M2STMicroelectronics |
MOSFET N-CH 600V 13A TO220 |
|
IPD50N06S4L08ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO252-31 |
|
FDB0190N807LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 270A TO263-7 |
|
CPC3710CTRWickmann / Littelfuse |
MOSFET N-CH 250V SOT89 |
|
MPF4391RLRARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
