类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Ta), 22A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 29mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 34 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1626 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1.2W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerDI3333-8 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK2624LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
XPH4R10ANB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 70A 8SOP |
|
STP200NF03STMicroelectronics |
MOSFET N-CH 30V 120A TO220AB |
|
DMT6015LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V PWRDI3333 |
|
PSMN017-30LL,115Rochester Electronics |
MOSFET N-CH 30V 15A 8DFN |
|
IXTA460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO263 |
|
BUK9E1R9-40E,127Rochester Electronics |
MOSFET N-CH 40V I2PAK |
|
STP5N105K5STMicroelectronics |
MOSFET N-CH 1050V 3A TO220 |
|
IXFH36N60PWickmann / Littelfuse |
MOSFET N-CH 600V 36A TO247AD |
|
BSC440N10NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 5.3A/18A TDSON |
|
STB47N50DM6AGSTMicroelectronics |
AUTOMOTIVE-GRADE N-CHANNEL 500 V |
|
IXTQ200N10TWickmann / Littelfuse |
MOSFET N-CH 100V 200A TO3P |
|
FDD8876Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 15A/73A TO252AA |