English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 4.1mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6920 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI086N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO262-3 |
|
IRL3705NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 89A TO220AB |
|
NTMFS4119NT3GRochester Electronics |
MOSFET N-CH 30V 11A 5DFN |
|
IPT012N08N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 300A 8HSOF |
|
IXFH15N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 15A TO247AD |
|
IPW50R280CERochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO4447AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 17A 8SOIC |
|
IXFT150N25X3HVWickmann / Littelfuse |
MOSFET N-CH 250V 150A TO268HV |
|
SCT3040KW7TLROHM Semiconductor |
TRANS SJT N-CH 1200V 56A TO263-7 |
|
BSZ0902NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 19A/40A TSDSON |
|
TP2104K1-GRoving Networks / Microchip Technology |
MOSFET P-CH 40V 160MA TO236AB |
|
DMNH10H028SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 60A TO220AB |
|
SIRA74DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 24A/81.2A PPAK |
