English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 120 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.1mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 240µA |
| 栅极电荷 (qg) (max) @ vgs: | 185 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11570 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3 |
| 包/箱: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR2407TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
|
RD3G600GNTLROHM Semiconductor |
MOSFET N-CH 40V 60A TO252 |
|
FDD6035ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NDD03N80Z-1GRochester Electronics |
MOSFET N-CH 800V 2.9A IPAK |
|
FQI2N30TURochester Electronics |
MOSFET N-CH 300V 2.1A I2PAK |
|
NTR4171PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23-3 |
|
SPA11N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-FP |
|
IRFH5110TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 11A/63A 8PQFN |
|
IXTF1R4N450Wickmann / Littelfuse |
MOSFET N-CH 4500V 1.4A I4PAC |
|
IRLZ24NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 18A D2PAK |
|
DMN62D0LFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100MA 3DFN |
|
DMP4015SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 14A TO252 |
|
APT5010LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 46A TO264 |
