类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 43.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 39mOhm @ 21.75A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 62 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 1800 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 146W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220-3 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFT120N30X3HVWickmann / Littelfuse |
MOSFET N-CH 300V 120A TO268HV |
|
MMIX1F360N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 235A 24SMPD |
|
SSM3J15FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 100MA USM |
|
SIRA18BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 19A/40A PPAK SO8 |
|
SSM3K335R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 6A SOT-23F |
|
STN3P6F6STMicroelectronics |
MOSFET P-CH 60V SOT223 |
|
SQM25N15-52_GE3Vishay / Siliconix |
MOSFET N-CH 150V 25A TO263 |
|
FDZ372NZRochester Electronics |
MOSFET N-CH 20V 4.7A 4WLCSP |
|
FDMS3572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.8A/22A 8MLP |
|
SIHFR430ATRR-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
|
NVMFS5C430NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 38A/200A 5DFN |
|
IPI075N15N3GRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IRFB31N20DPBFRochester Electronics |
IRFB31N20 - N-CHANNEL POWER MOS |