English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.8Ohm @ 850mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 680 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 39W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF9Z34PBFVishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |
|
IXFB132N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 132A PLUS264 |
|
FQA70N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 70A TO3PN |
|
NTF3055-160T3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STW70N65DM6STMicroelectronics |
MOSFET N-CH 650V 68A TO247 |
|
IPD90N04S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-3 |
|
FK8V03020LPanasonic |
MOSFET N CH 33V 14A WMINI8 |
|
NTQD4154ZR2GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPZ40N04S5L2R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
IPA65R280E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13.8A TO220-FP |
|
NTE2396NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 28A TO220 |
|
RM4N700IPRectron USA |
MOSFET N-CHANNEL 700V 4A TO251 |
|
FDPF190N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 27.4A TO220F |
