English
简体中文
SNAP-IN HIGH CV 105C 4300UF 63V
CAP CER 56PF 50V C0G/NP0 0603
MOSFET N-CH 900V 6.9A TO220
DC DC CONVERTER 12V 50W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 800mOhm @ 4.1A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 460µA |
| 栅极电荷 (qg) (max) @ vgs: | 42 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 33W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220 Full Pack |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT8M100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 8A TO247 |
|
STLD125N4F6AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
TPH7R506NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 22A 8SOP |
|
TJ60S04M3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A DPAK |
|
SPI20N60CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPD50N03S2L06GBTMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO252-3 |
|
AOD9N40Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 400V 8A TO252 |
|
IRFI1310NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 24A TO220AB FP |
|
CSD13385F5Texas Instruments |
MOSFET N-CH 12V 4.3A 3PICOSTAR |
|
IRF6898MTRPBFRochester Electronics |
MOSFET N-CH 25V 40A/214A DIRECT |
|
TPC6113(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5A VS-6 |
|
IAUT240N08S5N019ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 240A 8HSOF |
|
NDD03N50ZT4GRochester Electronics |
MOSFET N-CH 500V 2.6A DPAK |