English
简体中文
RES ARRAY 8 RES 22K OHM 16SOIC
MOSFET N-CH 50V 9.1A 6UDFN
TERM BLOCK 8POS 55DEG 3.5MM PCB
RF ATTENUATOR 8DB 50OHM SMA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 50 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 8A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 902.7 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 820mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | U-DFN2020-6 (Type F) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD95R450P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 14A TO252-3 |
|
BUK7E2R3-40E,127Nexperia |
MOSFET N-CH 40V 120A I2PAK |
|
NVTFS6H860NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8A/30A 8WDFN |
|
VN10LPZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA TO92-3 |
|
SIA817EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.5A PPAK SC70-6 |
|
NTD25P03LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 25A DPAK |
|
FDD5612Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5.4A TO252-3 |
|
PSMN2R8-40YSDXNexperia |
MOSFET N-CH 40V 160A LFPAK56 |
|
BSZ240N12NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 120V 37A 8TSDSON |
|
FQP19N20CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 19A TO220-3 |
|
SCT3105KW7TLROHM Semiconductor |
TRANS SJT N-CH 1200V 23A TO263-7 |
|
CSD23381F4TTexas Instruments |
MOSFET P-CH 12V 2.3A 3PICOSTAR |
|
RSF015N06FRATLROHM Semiconductor |
MOSFET N-CH 60V 1.5A TUMT3 |