English
简体中文
CAP ALUM 1000UF 20% 200V SNAP
POWER FIELD-EFFECT TRANSISTOR, 4
COMPACT 3PH DELTA SNGL STAGE PWR
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 42A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13.5mOhm @ 36A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1.57 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK1401A-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR3709ZPBFRochester Electronics |
MOSFET N-CH 30V 86A DPAK |
|
TSM70N380CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A ITO220AB |
|
IRFR13N20DTRLPRochester Electronics |
MOSFET N-CH 200V 13A DPAK |
|
SFP9540Rochester Electronics |
MOSFET P-CH 100V 17A TO220-3 |
|
SIS322DNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38.3A PPAK1212-8 |
|
DMNH4006SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 18A/90A TO252 |
|
FQU2N90TURochester Electronics |
MOSFET N-CH 900V 1.7A IPAK |
|
SIHG039N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 61A TO247AC |
|
IRFL210TRPBFVishay / Siliconix |
MOSFET N-CH 200V 960MA SOT223 |
|
PSMN016-100BS,118Nexperia |
MOSFET N-CH 100V 57A D2PAK |
|
FQP18N50V2Rochester Electronics |
MOSFET N-CH 500V 18A TO220-3 |
|
APT24F50BRoving Networks / Microchip Technology |
MOSFET N-CH 500V 24A TO247 |