English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.3Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 975 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 70W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF1P50Rochester Electronics |
MOSFET P-CH 500V 1.03A TO220F |
|
MIC94052BC6TRRochester Electronics |
P-CHANNEL POWER MOSFET |
|
STP80NF06STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
PSMN9R0-25MLC,115Nexperia |
MOSFET N-CH 25V 55A LFPAK33 |
|
IPD65R420CFDAATMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A TO252-3 |
|
IPI320N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 34A TO262-3 |
|
APT30F60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 31A ISOTOP |
|
PSMN027-100PS,127Nexperia |
MOSFET N-CH 100V 37A TO220AB |
|
IPB60R099CPATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO263-3 |
|
STW45NM60STMicroelectronics |
MOSFET N-CH 650V 45A TO247-3 |
|
TPH6R003NL,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 38A 8SOP |
|
IPI100N06S3L04XKIR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO262-3 |
|
SI7636DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
