类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 480mOhm @ 6.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 2.055 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 48W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220F |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRLR120TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
RSL020P03FRATRROHM Semiconductor |
MOSFET P-CH 30V 2A TUMT6 |
|
MCH3376-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 1.5A 3MCPH |
|
IXFB70N100XWickmann / Littelfuse |
MOSFET N-CH 1000V 70A PLUS264 |
|
SIR668DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 95A PPAK SO-8 |
|
IPB60R360P7ATMA1Rochester Electronics |
IPB60R360 - 600V, 0.36OHM, N-CHA |
|
BSB044N08NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 18A/90A 2WDSON |
|
IPP076N15N5AKSA1IR (Infineon Technologies) |
MOSFET N-CH 150V 112A TO220-3 |
|
TSM60NB600CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 7A TO251 |
|
STF26NM60NSTMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
SQM50P03-07_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 50A TO263 |
|
SPP20N60CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO220-3 |
|
STP10NK60ZSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |