类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5Ohm @ 200mA, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2.5 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 14 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STP38N65M5STMicroelectronics |
MOSFET N-CH 650V 30A TO220 |
|
SPI12N50C3XKSA1Rochester Electronics |
MOSFET N-CH 560V 11.6A TO262-3 |
|
BUK7E11-55B,127Rochester Electronics |
MOSFET N-CH 55V 75A I2PAK |
|
ZXMN2F34FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.4A SOT23-3 |
|
SVD14N03RT4GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
BSC014N04LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 31A/100A TDSON |
|
IRFZ44ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 51A D2PAK |
|
IXTA20N65X-TRLWickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
CSD19505KTTTTexas Instruments |
MOSFET N-CH 80V 200A DDPAK |
|
SI4425DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 19.7A 8SO |
|
STD80N10F7STMicroelectronics |
MOSFET N-CH 100V 70A DPAK |
|
SI7119DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 3.8A PPAK1212-8 |
|
BSZ050N03LSGRochester Electronics |
BSZ050N03 - 12V-300V N-CHANNEL P |