English
简体中文
MOSFET N-CH 100V 120A TO220-3
SWITCH KEYPAD 8 KEY NON-ILLUM
TRANSDUCER PREC PRESSURE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 184µA |
| 栅极电荷 (qg) (max) @ vgs: | 139 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 10300 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 250W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5885NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.2A 5DFN |
|
PMV20ENRNexperia |
MOSFET N-CH 30V 6A TO236AB |
|
RM8N650T2Rectron USA |
MOSFET N-CHANNEL 650V 8A TO220-3 |
|
NTA4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 238MA SC75 |
|
RF4E100AJTCRROHM Semiconductor |
MOSFET N-CH 30V 10A HUML2020L8 |
|
BSC031N06NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TDSON-8-1 |
|
STFI13NK60ZSTMicroelectronics |
MOSFET N-CH 600V 13A I2PAKFP |
|
IRFBG30PBFVishay / Siliconix |
MOSFET N-CH 1000V 3.1A TO220AB |
|
APT5020BVFRGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 26A TO247 |
|
FQP3N50CRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4C09NAT1GRochester Electronics |
MOSFET N-CH 30V 9A/52A 5DFN |
|
IRFU4615PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 33A IPAK |
|
IPA50R140CPRochester Electronics |
IPA50R140 - 500V COOLMOS N-CHANN |