类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 4.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 950mOhm @ 1.5A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 130µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 26W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQB19N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 21A D2PAK |
|
FDW264PRochester Electronics |
MOSFET P-CH 20V 9.7A 8TSSOP |
|
RQ5A040ZPTLROHM Semiconductor |
MOSFET P-CH 12V 4A TSMT3 |
|
HUF76009P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SCH1334-TL-HRochester Electronics |
MOSFET P-CH 12V 1.6A 6SCH |
|
AOD444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4A/12A TO252 |
|
SI4838BDY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 34A 8SO |
|
DMTH4005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A TO220AB |
|
PXN6R2-25QLJNexperia |
PXN6R2-25QL/SOT8002/MLPAK33 |
|
STF12NK60ZSTMicroelectronics |
MOSFET N-CH 600V 10A TO220FP |
|
PML260SN,118Rochester Electronics |
MOSFET N-CH 200V 8.8A DFN3333-8 |
|
ISL9N308AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK25E06K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 25A TO220-3 |