类型 | 描述 |
---|---|
系列: | STripFET™ III |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6.2mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 54 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 110W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BUK752R3-40C,127Rochester Electronics |
PFET, 100A I(D), 40V, 0.0023OHM, |
|
NDS9435ARochester Electronics |
MOSFET P-CH 30V 5.3A 8SOIC |
|
BUK7Y15-100EXRochester Electronics |
MOSFET N-CH 100V 68A LFPAK56 |
|
FDD3680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 25A TO252 |
|
RSJ800N06TLROHM Semiconductor |
MOSFET N-CH 60V 80A LPTS |
|
CPH6347-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 6A 6CPH |
|
2N7002A-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 180MA SOT23 |
|
SI4636DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A 8SO |
|
MCH6353-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 6A 6MCPH |
|
IXFR16N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 9A ISOPLUS247 |
|
BUK9506-40B,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.0071OHM, |
|
FQD11P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 9.4A DPAK |
|
FQPF1N60Rochester Electronics |
MOSFET N-CH 600V 900MA TO220F |