English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ DM6 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 68A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 4.75V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 125 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 4900 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 450W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 Long Leads |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM4NB65CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 650V 4A TO252 |
|
DMG7401SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 9.8A PWRDI3333-8 |
|
GKI06109Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 9A 8DFN |
|
IXFH270N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 270A TO247 |
|
SSM3J114TU(T5L,T)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 1.8A UFM |
|
BUK7M8R0-40EXNexperia |
MOSFET N-CH 40V 69A LFPAK33 |
|
IXTA50N25T-TRLWickmann / Littelfuse |
MOSFET N-CH 250V 50A TO263 |
|
FQP6N25Rochester Electronics |
MOSFET N-CH 250V 5.5A TO220-3 |
|
DMP25H18DLFDE-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 260MA 6UDFN |
|
IRF6716MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 39A DIRECTFET |
|
DMT4011LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 10.8A 8SO |
|
STF23NM50NSTMicroelectronics |
MOSFET N-CH 500V 17A TO220FP |
|
BUK9240-100A,118Nexperia |
MOSFET N-CH 100V 33A DPAK |
