English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 64A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 34A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 1.65 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 94W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5C612NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |
|
PMZB790SN,315Rochester Electronics |
MOSFET N-CH 60V 650MA DFN1006B-3 |
|
IRF7855PBFRochester Electronics |
MOSFET N-CH 60V 12A 8SO |
|
FQI3N30TURochester Electronics |
MOSFET N-CH 300V 3.2A I2PAK |
|
BSS169L6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
CPC3708CTRWickmann / Littelfuse |
MOSFET N-CH 350V 5MA SOT89 |
|
IAUT300N08S5N012ATMA2IR (Infineon Technologies) |
MOSFET N-CH 80V 300A 8HSOF |
|
FQI13N06LTURochester Electronics |
MOSFET N-CH 60V 13.6A I2PAK |
|
FQP19N10LRochester Electronics |
MOSFET N-CH 100V 19A TO220-3 |
|
NTD32N06L-001Rochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
NTMFS5C670NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
RQ5E035XNTCLROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT3 |
|
DMPH4013SK3Q-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 55A TO252 T&R |
