English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 400mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 260 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZXMN3F30FHTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 3.8A SOT23-3 |
|
IGO60R070D1AUMA1IR (Infineon Technologies) |
GANFET N-CH 600V 31A 20DSO |
|
MCH3481-TL-HRochester Electronics |
MOSFET N-CH 20V 2A SC70FL/MCPH3 |
|
FDMA410NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 9.5A 6MICROFET |
|
IRFW630BTM-FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 9A D2PAK |
|
NTZS3151PT1HRochester Electronics |
MOSFET P-CH 20V 860MA SOT563-6 |
|
IRFP4110PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO247AC |
|
AOSS32136CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 6.5A SOT23-3 |
|
DMN15H310SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 150V 8.3A TO252 |
|
IRF2804STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A D2PAK |
|
IPP60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO220-3 |
|
IRL540ARochester Electronics |
MOSFET N-CH 100V 28A TO220-3 |
|
STF4N80K5STMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
