类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 200mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 5Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 3V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±40V |
输入电容 (ciss) (max) @ vds: | 60 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 3-SMD |
包/箱: | 3-SMD, No Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSS7728NH6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
JDX7004Rochester Electronics |
NFET T0220FP JPN |
|
NVHL072N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 44A TO247-3 |
|
STB32NM50NSTMicroelectronics |
MOSFET N CH 500V 22A D2PAK |
|
IRFI9640GPBFVishay / Siliconix |
MOSFET P-CH 200V 6.1A TO220-3 |
|
PSMN1R7-60BS,118Nexperia |
MOSFET N-CH 60V 120A D2PAK |
|
IRFPF30PBFVishay / Siliconix |
MOSFET N-CH 900V 3.6A TO247-3 |
|
NTMS4939NR2GRochester Electronics |
MOSFET N-CH 30V 8A 8SOIC |
|
IPLK70R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
DMTH32M5LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 170A PWRDI5060-8 |
|
RSY200N05TLROHM Semiconductor |
MOSFET N-CH 45V 20A TCPT3 |
|
ZVN4306AVZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.1A TO92-3 |
|
TK20V60W5,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A 4DFN |