English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ DM2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 365mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA75337S3STRochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
IXFX94N50P2Wickmann / Littelfuse |
MOSFET N-CH 500V 94A PLUS247-3 |
|
FDB0690N1507LRochester Electronics |
MOSFET N-CH 150V 3.8A TO263-7 |
|
2SK2731T146ROHM Semiconductor |
MOSFET N-CH 30V 200MA SMT3 |
|
PMF250XNE115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD14N05LRochester Electronics |
MOSFET N-CH 50V 14A IPAK |
|
SQ4431EY-T1_BE3Vishay / Siliconix |
MOSFET P-CH 30V 10.8A 8SOIC |
|
SUM40012EL-GE3Vishay / Siliconix |
MOSFET N-CH 40V 150A TO263 |
|
FQB7N80TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY26P10TWickmann / Littelfuse |
MOSFET P-CH 100V 26A TO252 |
|
STW40N95DK5STMicroelectronics |
MOSFET N-CHANNEL 950V 38A TO247 |
|
SISH116DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 10.5A PPAK |
|
PMV42ENERNexperia |
MOSFET N-CH 30V 4.4A TO236AB |
