English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.2mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 125 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.52 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIR624DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 200V 5.7A/18.6A PPAK |
|
2SK1290-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHD9N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 9A DPAK |
|
SPW20N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO247-3 |
|
R6011ENJTLROHM Semiconductor |
MOSFET N-CH 600V 11A LPTS |
|
ZVN4206GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1A SOT223 |
|
BSC0902NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 23A/100A TDSON |
|
IPSA70R600P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO251-3 |
|
2SJ305TE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 200MA SC59 |
|
DMP32D5LFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA 3DFN |
|
TPC8132,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 7A 8SOP |
|
SI9435BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.1A 8SO |
|
NDF08N50ZHRochester Electronics |
MOSFET N-CH 500V 8.5A TO220FP |
