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MOSFET N-CH 20V 6.3A 6TSOP
IC DRAM 2GBIT PARALLEL 96TWBGA
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| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 28mOhm @ 2A, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 10.6 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 740 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.75W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SC-74, SOT-457 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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