类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 2.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 190mOhm @ 1.9A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 155 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.3W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 (TO-236) |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STB14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A D2PAK |
|
NTTFS6H850NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/68A 8WDFN |
|
STP8N90K5STMicroelectronics |
MOSFET N-CH 900V 8A TO220 |
|
2SK1658-T1-ARochester Electronics |
MOSFET N-CH 30V 100MA SC70-3 SSP |
|
SIRA04DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RSQ035N03HZGTRROHM Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6 |
|
APT42F50SRoving Networks / Microchip Technology |
MOSFET N-CH 500V 42A D3PAK |
|
IRF540STRRPBFVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
FDPF18N20FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220F |
|
STF18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A TO220FP |
|
PSMN4R3-40MSHXNexperia |
MOSFET N-CH 40V 95A LFPAK33 |
|
APT29F100B2Roving Networks / Microchip Technology |
MOSFET N-CH 1000V 30A T-MAX |
|
IXFN60N80PWickmann / Littelfuse |
MOSFET N-CH 800V 53A SOT-227B |