English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 100mOhm @ 10A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 60W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB8444TSRochester Electronics |
MOSFET N-CH 40V 20A/70A TO263-5 |
|
SQ4483EY-T1_BE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 30A 8SOIC |
|
NDD01N60T4GRochester Electronics |
MOSFET N-CH 600V 1.5A DPAK |
|
BSH205G2RNexperia |
MOSFET P-CH 20V 2A TO236AB |
|
SIS890ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.6A/24.7A PPAK |
|
AON6522Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 71A/200A 8DFN |
|
SSP2N60ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM130NB06LCRTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 10A/51A 8PDFN |
|
SUP57N20-33-E3Vishay / Siliconix |
MOSFET N-CH 200V 57A TO220AB |
|
IRLML2060TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 1.2A SOT23 |
|
FCHD125N65S3R0-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A TO247 |
|
APTC60SKM24T1GRoving Networks / Microchip Technology |
MOSFET N-CH 600V 95A SP1 |
|
IXTK102N30PWickmann / Littelfuse |
MOSFET N-CH 300V 102A TO264 |
