English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 65mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.47W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-Microfoot |
| 包/箱: | 4-XFBGA, CSPBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS6680Rochester Electronics |
MOSFET N-CH 30V 11.5A 8SOIC |
|
FDMC86183Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 47A 8PQFN |
|
IPN80R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 4.5A SOT223 |
|
BSO110N03MSGXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 10A 8DSO |
|
APT9F100BRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 9A TO247 |
|
DMTH4004LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 100A PWRDI5060-8 |
|
SQS423ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 16A PPAK 1212-8W |
|
NTB23N03RT4Rochester Electronics |
MOSFET N-CH 25V 6A D2PAK-3 |
|
HUF76407D3Rochester Electronics |
MOSFET N-CH 60V 12A IPAK |
|
DMPH4023SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 50A TO252 T&R |
|
DMN2450UFB4-7RZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1A X2-DFN1006-3 |
|
SFU9024TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
FQI4P40TURochester Electronics |
MOSFET P-CH 400V 3.5A I2PAK |
