类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 13.4mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 40µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2300 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 2.2W (Ta), 43W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | MG-WDSON-2, CanPAK M™ |
包/箱: | 3-WDSON |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
APT5010JLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 41A ISOTOP |
![]() |
SIRA52DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
![]() |
PHK5NQ15T518Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
![]() |
IPP60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO220-3 |
![]() |
DMN53D0L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |
![]() |
TK31V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A 4DFN |
![]() |
FQD3N60CTMRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
APTM20DAM05GRoving Networks / Microchip Technology |
MOSFET N-CH 200V 317A SP6 |
![]() |
SPW35N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 34.1A TO247-3 |
![]() |
NDP6020PRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
![]() |
SPB02N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTB6N60T4Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
APT38F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 38A ISOTOP |