类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
NDB603ALRochester Electronics |
MOSFET N-CH 30V 25A D2PAK |
![]() |
IXTA48P05TWickmann / Littelfuse |
MOSFET P-CH 50V 48A TO263 |
![]() |
AON6482Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 5.5A/28A 8DFN |
![]() |
FDH50N50-F133Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 48A TO247-3 |
![]() |
STU2N62K3STMicroelectronics |
MOSFET N-CH 620V 2.2A IPAK |
![]() |
NTB60N06LT4GRochester Electronics |
MOSFET N-CH 60V 60A D2PAK |
![]() |
STFI28N60M2STMicroelectronics |
MOSFET N-CH 600V 22A I2PAKFP |
![]() |
FDD2570Rochester Electronics |
MOSFET N-CH 150V 4.7A TO252 |
![]() |
IXTA6N100D2HVWickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO263HV |
![]() |
IPA60R190P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20.2A TO220-FP |
![]() |
IRFS614BRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TK35S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 35A DPAK |
![]() |
STD2N95K5STMicroelectronics |
MOSFET N-CH 950V 2A DPAK |