English
简体中文
MEMS OSC XO 74.175824MHZ H/LV-CM
MOSFET N-CH 600V 3.2A TO251-3
BIN PLASTIC BLACK
FERRITE CORE PQ 4.5UH N97 2PCS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C6 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 1.4Ohm @ 1.1A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 90µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 200 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28.4W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO251-3 |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMZB150UNEYLNexperia |
MOSFET N-CH 20V 1.5A DFN1006B-3 |
|
NTD5407NT4GRochester Electronics |
MOSFET N-CH 40V 7.6A/38A DPAK |
|
HUF75333S3STRochester Electronics |
MOSFET N-CH 55V 66A D2PAK |
|
DMP1080UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 3.3A U-WLB1010-4 |
|
IRFF9221Rochester Electronics |
MOSFET N-CH 150V 2.5A TO205AF |
|
IRFS4615TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 33A D2PAK |
|
STP75N3LLH6STMicroelectronics |
MOSFET N-CH 30V 75A TO220 |
|
STFH40N60M2STMicroelectronics |
MOSFET N-CH 600V 34A TO220FP |
|
IXTP340N04T4Wickmann / Littelfuse |
MOSFET N-CH 40V 340A TO220AB |
|
NP36P04SDG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 36A TO252 |
|
MTP3055VRochester Electronics |
MOSFET N-CH 60V 12A TO220AB |
|
XP162A11C0PR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 2.5A SOT89 |
|
AUIRFR4292TRLRochester Electronics |
MOSFET N-CH 250V 9.3A DPAK |