English
简体中文
HEATSINK 45X45X25MM R-TAB T766
MOSFET N-CH 300V 210A PLUS264
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, Polar3™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 210A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 14.5mOhm @ 105A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 268 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 16200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1890W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS264™ |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXFN32N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 32A SOT-227B |
|
BUK7Y25-60EXRochester Electronics |
TRANSISTOR >30MHZ |
|
SUP60020E-GE3Vishay / Siliconix |
MOSFET N-CH 80V 150A TO220AB |
|
APT20M20JLLRoving Networks / Microchip Technology |
MOSFET N-CH 200V 104A ISOTOP |
|
IRLR110Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
SQJ147ELP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 90A PPAK SO-8 |
|
PSMN030-150P,127Rochester Electronics |
MOSFET N-CH 150V 55.5A TO220AB |
|
STI32N65M5STMicroelectronics |
MOSFET N-CH 650V 24A I2PAK |
|
IPP65R310CFDAAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220-3 |
|
SI3493BDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 8A 6TSOP |
|
ZXMN6A25N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 4.3A 8SO |
|
STF18NM60NDSTMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
NVF6P02T3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 10A SOT-223 |