English
简体中文
WE-AGDT AUXILIARY GATE DRIVE TRA
MOSFET P-CH 150V 36A TO263
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchP™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 36A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMP3098LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.8A SOT23-3 |
|
RFD14N05SM9A_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMTH10H010SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 100A TO220AB |
|
STW12N170K5STMicroelectronics |
MOSFET N-CH 1700V 5A TO247 |
|
FDMS2572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.5A/27A 8MLP |
|
IPB009N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 180A TO263-7 |
|
SQS411ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 16A PPAK1212-8W |
|
SSM3K15F,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA S-MINI |
|
SI5441BDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4.4A 1206-8 |
|
IRFS38N20DTRLPIR (Infineon Technologies) |
MOSFET N-CH 200V 43A D2PAK |
|
IRL7486MTRPBFRochester Electronics |
IRL7486M - 12V-300V N-CHANNEL PO |
|
RSS070P05FRATBROHM Semiconductor |
MOSFET P-CH 45V 7A 8SOP |
|
R6024ENJTLROHM Semiconductor |
MOSFET N-CH 600V 24A LPTS |