English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 180mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 106 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2322 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN63D8L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 350MA SOT23 |
|
TSM70N380CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A TO251 |
|
NDB5060LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 26A D2PAK |
|
IRLML0040TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 3.6A SOT23 |
|
MTB55N06ZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXKK85N60CWickmann / Littelfuse |
MOSFET N-CH 600V 85A TO264A |
|
STL92N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 16A POWERFLAT |
|
PSMN1R6-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
ZXM61N02FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.7A SOT23-3 |
|
UF3SC065040B7SUnitedSiC |
650V/40MOHM, SIC, STACKED FAST C |
|
NXV90EPRNexperia |
NXV90EP/SOT23/TO-236AB |
|
XP233N0501TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 500MA SOT23 |
|
IRF3205ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO220AB |
