English
简体中文
RES 252 OHM 0.5% 1/16W 0402
CAP CER 0.018UF 10V U2J 1206
MOSFET N-CH 800V 4A SOT223
CONN STRAIN RELIEF RED
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ P7 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.4Ohm @ 1.4A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 70µA |
| 栅极电荷 (qg) (max) @ vgs: | 10 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 250 pF @ 500 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 7W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-SOT223 |
| 包/箱: | TO-261-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSL302SNH6327XTSA1Rochester Electronics |
MOSFET N-CH 30V 7.1A TSOP-6-6 |
|
STD1NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 1A IPAK |
|
BUK7M10-40EXNexperia |
MOSFET N-CH 40V 56A LFPAK33 |
|
2SK4222Rochester Electronics |
MOSFET N-CH 600V 23A TO3PB |
|
ZXMN20B28KTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 1.5A TO252-3 |
|
AUIRF3415Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
BSP615S2LRochester Electronics |
MOSFET N-CH 55V 2.8A SOT223-4 |
|
NTMFS5H414NLT1GRochester Electronics |
MOSFET N-CH 40V 35A/210A 5DFN |
|
IRFI3306GPBFRochester Electronics |
MOSFET N-CH 60V 71A TO220 |
|
PSMN6R5-80BS,118Nexperia |
MOSFET N-CH 80V 100A D2PAK |
|
IXTK90P20PWickmann / Littelfuse |
MOSFET P-CH 200V 90A TO264 |
|
PMV77EN215Rochester Electronics |
SMALL SIGNAL FET |
|
TSM2301ACX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 2.8A SOT23 |