English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 110mOhm @ 14.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 80.4 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2785 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 190W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN10H220L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.4A SOT23 |
|
BUK9M9R5-40HXNexperia |
MOSFET N-CH 40V 40A LFPAK33 |
|
IPN70R1K4P7SATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 700V 4A SOT223 |
|
PSMN2R2-40BS,118Rochester Electronics |
MOSFET N-CH 40V 100A D2PAK |
|
MTB9N25ET4Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MSC015SMA070BRoving Networks / Microchip Technology |
SICFET N-CH 700V 131A TO247-3 |
|
PSMN7R6-60PS,127Nexperia |
MOSFET N-CH 60V 92A TO220AB |
|
IXFK64N50PWickmann / Littelfuse |
MOSFET N-CH 500V 64A TO264AA |
|
FDP16N50Rochester Electronics |
MOSFET N-CH 500V 16A TO220-3 |
|
IPB80N06S4L05ATMA1Rochester Electronics |
MOSFET N-CH 60V 80A TO263-3 |
|
SSM3K35AFS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 20V 250MA SSM |
|
STD16NF06LT4STMicroelectronics |
MOSFET N-CH 60V 24A DPAK |
|
SPU08N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
