English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 44A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 30mOhm @ 44A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 108 nC @ 20 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.7 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 155W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ND2012L-TR1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
APT6025BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 24A TO247 |
|
PMF3800SN,115Rochester Electronics |
MOSFET N-CH 60V 260MA SC70 |
|
SI2314EDS-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 3.77A SOT23-3 |
|
IAUC120N06S5N017ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TDSON-8-43 |
|
SFT1458-HRochester Electronics |
MOSFET N-CH 600V 1A IPAK/TP |
|
STP55NF06STMicroelectronics |
MOSFET N-CH 60V 50A TO220AB |
|
SUM90P10-19L-E3Vishay / Siliconix |
MOSFET P-CH 100V 90A TO263 |
|
HUFA75307T3STRochester Electronics |
MOSFET N-CH 55V 2.6A SOT223-4 |
|
NTMFS4C03NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/136A 5DFN |
|
DMT10H010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 68.8A TO252 |
|
STP30NF10STMicroelectronics |
MOSFET N-CH 100V 35A TO220AB |
|
IPP60R099C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37.9A TO220-3 |
