English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 113.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.86 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI50R299CPXKSA1Rochester Electronics |
MOSFET N-CH 500V 12A TO262-3 |
|
PMXB56ENZRochester Electronics |
30 V, N-CHANNEL TRENCH MOSFET |
|
IRLR3410TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
SQ3419EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 6.9A 6TSOP |
|
IRFR9110TRRPBFVishay / Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
|
STL33N65M2STMicroelectronics |
MOSFET N-CH 650V 20A PWRFLAT HV |
|
5LN01M-TL-HRochester Electronics |
MOSFET N-CH 50V 100MA 3MCP |
|
SIHF8N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220 |
|
RUU002N05T106ROHM Semiconductor |
MOSFET N-CH 50V 200MA UMT3 |
|
SIR150DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
STFU10N80K5STMicroelectronics |
MOSFET N-CH 800V 9A TO220FP |
|
IXFK24N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 24A TO264AA |
|
IPD65R1K4CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 2.8A TO252-3 |
