类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDMS7676Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
AUIRFS3107TRLIR (Infineon Technologies) |
MOSFET N-CH 75V 195A D2PAK |
|
2SJ330-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
RF1K4915796Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PH3120L,115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SFU9220TURochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK7M21-40EXNexperia |
MOSFET N-CH 40V 33A LFPAK33 |
|
MTP75N03HDLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT10021JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 37A ISOTOP |
|
NVMFS5C456NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 22A/87A 5DFN |
|
IRFH5302TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A/100A PQFN |
|
TSM120N06LCS RLGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 23A 8SOP |
|
STP70NF03LSTMicroelectronics |
MOSFET N-CH 30V 70A TO220AB |