English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVII-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 8V |
| rds on (max) @ id, vgs: | 185mOhm @ 1A, 8V |
| vgs(th) (最大值) @ id: | 1.2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 2.2 nC @ 4.2 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 130 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-UDFN (2x2) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD50R380CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 14.1A TO252-3 |
|
IRLZ14STRLPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
PMN40ENAXNexperia |
MOSFET N-CH 60V 4.2A 6TSOP |
|
BSZ180P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 9A/39.6A TSDSON |
|
5LP01M-TL-HRochester Electronics |
MOSFET P-CH 50V 70MA 3MCP |
|
IRFR214TRLPBFVishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
|
PSMN1R9-40PLQNexperia |
MOSFET N-CH 40V 150A TO220AB |
|
FDB024N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
|
NTP4302GRochester Electronics |
MOSFET N-CH 30V 74A TO220AB |
|
AO4449Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 7A 8SOIC |
|
BSO201SPHXUMA1IR (Infineon Technologies) |
MOSFET P-CH 20V 12A 8DSO |
|
SQM40014EM_GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A TO263-7 |
|
SIS488DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 40A PPAK1212-8 |
