English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 300A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 150A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 375 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 23800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 695W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227B |
| 包/箱: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK1838L-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFIZ14GPBFVishay / Siliconix |
MOSFET N-CH 60V 8A TO220-3 |
|
SI7634BDP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
RFD14N05SMRochester Electronics |
MOSFET N-CH 50V 14A TO252AA |
|
IPB160N08S4-03ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 15A ISOPLUS247 |
|
IXTT82N25PWickmann / Littelfuse |
MOSFET N-CH 250V 82A TO268 |
|
SSM5H90ATU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 2.4A UFV |
|
IRFZ48SPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
FDB603ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
ISL9N312AD3STNLRochester Electronics |
MOSFET N-CH 30V 50A TO252AA |
|
IPU50R2K0CEBKMA1Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251-3 |
