English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™, PolarHT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 64A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 96mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 12000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1040W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264AA (IXFK) |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMC6296Rochester Electronics |
MOSFET N-CH 30V 11.5A 8MLP |
|
NTD25P03LGRochester Electronics |
MOSFET P-CH 30V 25A DPAK |
|
FQAF11N90Rochester Electronics |
MOSFET N-CH 900V 7.2A TO3PF |
|
FDMS86101ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 13A/60A 8PQFN |
|
FDMC7692SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.5A/18A 8MLP |
|
TN2540N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 175MA TO92-3 |
|
BUK969R0-60E,118Nexperia |
MOSFET N-CH 60V 75A D2PAK |
|
IXTL2N450Wickmann / Littelfuse |
MOSFET N-CH 4500V 2A I5PAK |
|
FDB9406L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A D2PAK |
|
APT24M80SRoving Networks / Microchip Technology |
MOSFET N-CH 800V 25A D3PAK |
|
PSMN4R1-60YLXNexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
2SJ546-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
6HP04CH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 370MA 3CPH |
