FET 60V 1.0 MOHM SOT223
CBL ASSY IPX MHF1 PLG-PLG 9"
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 100mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 345 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3W (Ta) |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-223-4 |
包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSP296L6433Rochester Electronics |
SMALL-SIGNAL N-CHANNEL MOSFET |
|
IRLR7833IR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
|
SI1308EDL-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 1.4A SOT323 |
|
TSM025NB04LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 24A/161A 8PDFN |
|
HUF75343G3Rochester Electronics |
MOSFET N-CH 55V 75A TO247-3 |
|
BSH103,215Nexperia |
MOSFET N-CH 30V 850MA TO236AB |
|
STB141NF55STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
FQB4N80TMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
TK8A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 8A TO220SIS |
|
FQPF8P10Rochester Electronics |
MOSFET P-CH 100V 5.3A TO220F |
|
DMN2020UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 9A X1-DFN1616-6 |
|
SSM3K35AMFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA VESM |
|
HUF75631SK8TRochester Electronics |
MOSFET N-CH 100V 5.5A 8SOIC |